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Paper published in Materials Research Express

Self-organized growth of germanium nanocolumns

, D. , , , and

Abstract

The crystalline germanium nanostructures were obtained on a silicon surface by the chemical vapor deposition technique using a germanium (IV) iso-propoxide ([Ge(OiPr)4]) metalorganic precursor as a germanium source. As was observed, the one-dimensional (1D) germanium nanostructures on the silicon surface form without using a metal catalyst, meaning that the formation of 1D nanostructures is based not on a vapor–liquid–solid (VLS) growth mechanism, but on self-organization processes which take place on the silicon surfaces during the CVD process of germanium iso-propoxide pyrolysis. Our observation suggests that the non-catalytic growth of germanium nanocolumns is strongly dependent on the CVD process temperature. The germanium phase composition and morphology have been investigated by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS), and high resolution scanning electron microscopy (HRSEM), respectively. Our results provide a new way to grow 1D germanium nanostructures without contamination by a catalyst, which the vapor–liquid–solid growth mechanism is known to cause, allowing for the application of such materials in micro- and optoelectronics.

Mater. Res. Express 2017, 4, 35003.

Opens external link in new windowDOI: 10.1088/2053-1591/aa5ed6

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